The first graphene-only integrated circuit was created by International Business Machines (NYSE:IBM) three years ago. However, this was not a complete breakthrough because they used largely silicon and metal for much of the hardware. University of California Santa Barbara has made a crucial discovery that involves designing an integrated circuit completely from graphene only. This new model is based on the fact that graphene displays different qualities depending on its pattern, i.e. a wide ribbon displays metallic qualities while a narrow ribbon displays semiconductor properties. If chips would be designed this way then they would be much thinner, efficient and easier to assemble as compared to the ones made with mixed material. Currently a graphene Integrated Circuit is a theoretical computer model yet to be practically made; there are no plans to produce graphene chips at the moment, therefore this could take some time to see.

Graphene Integrated Circuit – Super computer

As scientists continue to improve silicon based ICs (which involves fashioning smaller transistors onto a chip, reducing power consumption and increasing its performance) they face challenges of contact resistance. This is resistance that builds up when components conducting electricity get in touch with each other. This may not be a problem for a single component, but when there are millions of transistors and interconnects on a chip, the combined energy is a major concern.

As a designer fuses various small components onto silicon chips, more complications emerge. This is where graphene overcomes silicon. While silicon is purely a semiconductor, graphene has both conductor and semi conductor qualities. Therefore, it can act as a metal conductor and as a semi conductor just like silicon. Due to these two major qualities of graphene, a designer can fashion the entire IC onto a graphene sheet and successfully do away with any contact resistance.

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Given the impending bottleneck of supply in indium tin oxide, a material currently used as a transparent conducting film, researchers are now focusing their attention on graphene as a cheaper alternative since it has ideal properties for this purpose.

Photo-voltaic manufacturers have taken little interest in using graphene as a replacement of indium tin oxide as a transparent conducting film, even when graphene has the highest potential of filling this looming gap. This lack of interest has been partly due to little research into what happens to graphene’s attractive conductivity when used together with silicon.

This, however, will change now that researchers have found out that graphene does not lose its remarkable properties when used together with silicon.

Graphene and Silicon Solar Cell

Researchers had revealed that when graphene is incorporated into a pile of layers, same a thin film solar cell based on silicon, the material does not significantly change its conductive properties as initially feared.

The researchers used a process of chemical vapor deposition to grow the graphene on a copper sheet, transferred it to a substrate made from glass, and then covered it with a thin film made from silicon. The researchers experimented with different morphologies of silicon and found out that graphene maintained its conductive properties in all cases. Graphene still retains its properties, even when coated with silicon with different characteristics.

The conductive properties of graphene, when measured, exceeded most materials. For instance, its carrier mobility is 30 times higher than that of the conventional contact layers based on zinc oxide. Despite the fact that it is difficult to use contact layers made from graphene with external contacts, the prospects have attracted interest all over the world. Already, thin film technology enthusiasts have invested in incorporating this development in their work.

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Manufacturers will soon be able to replace silicon with carbon nanotube transistors in making transistors used in electronic devices. This is because carbon nanotubes address most of the shortcomings that silicon has. Carbon nanotubes are the ideal replacements for silicon since they exist in several allotropes — each of which have a high potential.

Carbon nanotube transistors

Recently, researchers successfully demonstrated a working computer based on carbon nanotube transistors, instead of the conventional silicon ones. This promises much smaller devices that will be exceedingly fast while consuming very low power. Initially, researchers made individual transistors from carbon nanotubes, and later advanced to making simple electronic circuits. Eventually, they interconnected the transistors to form a low-powered “Turing complete” computer from these carbon nanotube transistors.

While this demonstration cannot be considered as a breakthrough, it can be viewed as the first fundamental steps to exploring with precision the possibilities of replacing silicon in the manufacture of semiconductors. It shows that carbon nanotube transistors can make a universal computer, just like silicon.

Some of the advantages of using carbon nanotube transistors to make computers in place of silicon are that these computers will be ever more powerful, much faster and cheaper than conventional ones. They also require less power to operate that the existing ones.

Since any new technology unveiled must meet the thorough factory processes that constitute the modern semiconductor industry, it might take not less than three years for this technology to be tested and perfected before it hits the market. Some companies such as I.B.M are already wary that silicon might cease to scale down further in its use for the manufacture of transistors. These companies have, therefore, turned to the possibility of using carbon nanotubes. This computer was made in accordance with the standard industry requirements such as those used to make silicon transistors. This means that it will be possible to manufacture hybrid chips from carbon nanotubes and silicon in certain locations/proportions to extend the use of silicon.

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Samsung Electronics – Investing in Graphene

Samsung Electronics, one of the world’s leading manufacturers of electronics, is looking into graphene properties for the production of devices that are likely to change the world. Recently, the company, through its principal research and development incubator (Samsung Advanced Institute of Technology), developed a transistor structure using graphene that has ‘miracle’ characteristics.

The shortcomings of the silicon transistors that are currently in use have motivated the move into graphene transistors.

In most semiconductor devices used today, billions of transistors use silicon transistors for their performance. In order to boost their performance speeds, i.e. their speeds, manufactures either minimize the size of the silicon transistors in a bid to shorten the distance that the electrons need to travel, or replace them with materials that possess properties for faster electron mobility which will increase the output of the semiconductor devices. Over the years, most manufacturers have been reducing the size of the transistors to boost performance. However, this trend will change due to the discovery of the graphene transistors.

Graphene has electron mobility of approximately two hundred times higher than that of the conventional silicon used in making transistors used in semiconductor devices. As a result, graphene transistors are potential replacements of silicon transistors.

Graphene is the world’s thinnest material, with a thickness of one atom. In addition to being exceptional in conducting heat and electricity, it is also very strong and flexible. Samsung Electronics aims to manufacture sleek devices with these characteristics. These devices could have multiple features that aim at satisfying customers while at the same time ensuring their durability.

The fact that graphene can be used to make an ultra slim phone which is ‘bendable’ or ‘foldable’ and among other features such as transparency (just like Samsung’s ‘YOUM’) excites a lot of people.

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